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Polycrystalline ZnO thin films were synthesized on Si(111) substrates by pulsed laser deposition (PLD) under oxygen sufficient condition at temperatures ranging from 550 to 700∘C. The results of in situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) show that the (002) orientation of ZnO thin films is deteriorated, but the full-width at half-maximum (FWHM) of (002)...
We determined the density of neutral oxygen atoms in microwave plasma using a fiber-optics catalytic probe (FOCP). Plasma was created within a quartz tube with an outer diameter of 5cm by a 2.45GHz microwave generator with an output power up to 1000W. The oxygen flow was varied between 4 and 20l/h. The O-atom density was found to increase monotonically with the increasing discharge power, and it decreased...
The growth process of CuO and Cu 2 O thin films on MgO(001) substrates by reactive dc-magnetron sputtering was studied by reflection high-energy electron diffraction (RHEED) and atomic-force microscopy (AFM). The RHEED pattern and AFM image showed that (1) three-dimensional Cu(001) islands grew on MgO under the nonreactive sputtering condition, (2) CuO(111) was deposited layer by layer on...
In the present study, 57 FePt films are prepared with reactive ion beam sputtering using mixture of argon and nitrogen gases. Energy-dispersive X-ray reflectivity is used to estimate the thickness of the as-deposited films. Structural and magnetic properties of the as-deposited and annealed films are studied using grazing incidence X-ray diffraction (GIXRD), magneto-optical Kerr effect (MOKE)...
Thermal donors formation in silicon implanted with H 2+ or He + ions or co-implanted with both kinds of ions and annealed at 720K under atmospheric and enhanced pressure was studied. Interaction between defects from different implanted layers was also analysed. Local strain in implanted layers was found to determine the process of defect and impurity redistribution.
Energy-resolved mass spectroscopy was used to investigate differences in ion-bombardment characteristics during conventional reactive magnetron sputtering of TiN films and their deposition using a grid-assisted magnetron system with anode at a high potential (up to 350V relative to grounded chamber walls). Narrow ion energy distributions with a maximum corresponding to the ion energy close to 100eV...
The TiO x thin films were prepared by electron beam evaporation using TiO as the starting material. The effect of the annealing temperature on the optical and electrical properties was investigated. The spectra of X-ray photoelectron spectroscopy reveal that Ti in the films mainly exist in the forms of Ti 2+ and Ti 3+ below 400°C 24h annealing. The charge transfer between different...
The charge exchanges in N2+-N2 and O2+-O2 collisions were studied using the Monte Carlo simulation technique. The collision cross sections for charge exchange were derived by comparing the calculated drift velocities and longitudinal diffusion coefficients of N2+ and O2+ ions in N2 and O2 gases, respectively, with the measured data in a wide range of reduced electric field E/N of ∼5-1000Td (1Td=10-21Vm2)...
The National Physical Laboratory, India, has established an ultrasonic interferometer manometer (UIM) as a primary standard in the barometric pressure region. This paper reports the results of the measurement uncertainty of the UIM evaluated under experimental conditions at each pressure point through a software developed and integrated with the existing operating software program. Through the operating...
The contact angle measurements have shown that polydimethyl siloxane (PDMS) surfaces treated by air plasma can recover up to about 40% of its hydrophobic nature in less than 20min of air exposure. Therefore, poly(ethylene glycol) (PEG) silane was grafted after plasma treatment to permanently change the PDMS surface as hydrophilic in nature for micro fluidic application. The surface chemistry of plasma-treated...
The intercorrelation of aluminate properties, such as structure, component and metal Os film coating with electron emission capability and longevity of Ba dispenser cathodes, has been investigated. It is shown that reactants react completely and the percentage of tribarium aluminates is larger in the normal environment, and that at 1723K the pulse of cathode impregnated in the above aluminates is...
Commercially graded SiC samples were implanted with 250keV germanium ions (Ge + ) at room temperature. For Ge + ions source, laser-induced plasma (LIP) technique was used. Ge + implantation was confirmed by energy dispersive X-ray (EDX) analysis. Change in FWHM and lattice constant of SiC samples has been observed after the Ge implantation, calculated by Bragg's law from XRD...
An investigation of the structure formation of as-cast Al–11wt% Si (AlSi11) and Al–11wt% Si–2wt% Fe (AlSi11Fe2) rapidly solidified (RS) ribbons is performed. Ribbon samples are examined in detail using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A nanoscale thickness layer of Si-precipitations, at both Al-grains boundary and oxide/Al-matrix interface, is found to...
A very thin dielectric flash layer (DFL) was used in addition to Ta for Cu/ultra-low-K (porous SiLK™) back-end technology. Atomic force microscopy showed that SiC DFL is superior to Si 3 N 4 or SiO 2 DFL in terms of smaller surface roughness. It appears to the authors that the key point to get a very smooth DFL is to avoid the use of nitrogen-containing gases like NH 3...
Implant related infections remain a concern in modern surgery. Surface modification is an effective way to reduce the occurrence of these complications. Of various techniques, ion implantation shows promise. In the present work, silver and copper were ion implanted separately, into three typical medical metals, namely 317L stainless steel, titanium, and Ti–Al–Nb by a MEVVA ion source machine at various...
Thin films of erbium–manganese oxide were grown on glass and p-type Si substrates. The films were thermally pre-annealed at different temperatures ranging from 400 to 1000°C to produce different crystalline structures and agitate a solid-state reaction. The structural characterisation of the films was carried out by X-ray diffraction (XRD) and energy dispersion X-ray fluorescence (XRF). The XRD investigation...
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